Modeling the temperature noisy performance of low-noise III-V microwave devices down to cryogenic levels

Author

Caddemi, A. ; Donato, N. ; Tuccari, G.

Author_Institution

Dipt. di Fisica, Messina Univ., Italy

fYear

2001

fDate

2001

Firstpage

267

Lastpage

272

Abstract

We performed research work on the effects of temperature by investigating the, DC behavior, the small signal and the noise performance of HEMT and HBT at microwave frequencies by means of different experimental systems down to cryogenic levels. The measurement data were then employed to extract temperature-dependent noisy models to be implemented in commercial CAD software. Here we report the results of the modeling procedure with a special concern for the noise performance whose knowledge is of primary importance in the design of ultra high sensitivity receivers

Keywords

III-V semiconductors; cryogenic electronics; equivalent circuits; heterojunction bipolar transistors; high electron mobility transistors; microwave bipolar transistors; microwave field effect transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; 30 to 320 K; 40 GHz; DC behavior; HBT; HEMT; commercial CAD software; cryogenic levels; device noise performance; low-noise III-V microwave devices; measurement data; microwave frequencies; small signal performance; temperature noisy performance; temperature-dependent noise models; Cryogenics; Data mining; Design automation; HEMTs; Heterojunction bipolar transistors; III-V semiconductor materials; Microwave frequencies; Noise level; Software measurement; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on

Conference_Location

Vienna

Print_ISBN

0-7803-7049-X

Type

conf

DOI

10.1109/EDMO.2001.974318

Filename

974318