Title :
A folded current-reused CMOS power amplifier for low-voltage 3.0–5.0 GHz UWB applications
Author :
Zhengyu Qian ; Xiaole Cui ; Bo Wang ; Xiangrong Zhang ; Chung-Len Lee
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
This paper proposes a low-voltage power amplifier for the 3.0-5.0 GHz ultra-wideband applications. Based on the classical current-reused technique, it adopts a folded topology to achieve the low-voltage working with acceptable output linearity. Its two-stage amplifying configuration consists of only one NMOS and one PMOS transistors. Implemented in the 0.18 μm CMOS technology, it obtains a gain as high as 16 dB with only ±0.5 dB flatness over the full working band, and consumes only 23.2 mW with 0.75mm2 size under 1.2 V.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; MOSFET; field effect MMIC; low-power electronics; ultra wideband technology; CMOS technology; NMOS transistors; PMOS transistors; folded current-reused CMOS power amplifier; frequency 3.0 GHz to 5.0 GHz; low-voltage power amplifier; power 23.2 mW; size 0.18 mum; two-stage amplifying configuration; ultrawideband applications; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Gain; Linearity; MOSFET; Power amplifiers; Topology;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6812036
