Title :
Co-design of ESD protection and LNA in RFIC
Author :
Yueguo Hao ; Qiao Zhang ; Xiaopeng Bai ; Zitao Shi ; Huainan Ma ; Yuhua Cheng
Author_Institution :
Shanghai Res. Inst. of Micro Electron. (SHRIME), Peking Univ., Shanghai, China
Abstract :
This paper introduces a new FoM (figure of merit) to evaluate the overall performance of ESD and LNA and presents a design procedure of establishing a standard library of ESD protection cells to reduce the design time and complexity for RFIC designer. The electrostatic discharge protection cells have been designed in a 0.35μm BiCMOS process. The ESD robustness and RF characteristics will be verified when the RF chip is done.
Keywords :
BiCMOS analogue integrated circuits; electrostatic discharge; integrated circuit design; low noise amplifiers; radiofrequency integrated circuits; BiCMOS process; ESD protection; FoM; LNA; RFIC; electrostatic discharge protection; figure of merit; low noise amplifiers; radiofrequency integrated circuits; size 0.35 mum; Electrostatic discharges; Inductors; Radio frequency; Radiofrequency integrated circuits; Robustness; Standards; Topology;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6812038
