Title :
Drift and temperature compensation scheme for an intelligent ion-sensitive field effect transistor sensory system
Author :
Das, M.P. ; Bhuyan, M.
Author_Institution :
Dept. of Electron. & Commun. Eng., Tezpur Univ., Tezpur, India
Abstract :
A new intelligent drift and temperature compensation technique leading the conventional ISFET to an Intelligent one is reported in this piece of work. The theoretical compensation model studied here is based on the predefined experimental time dependent and temperature dependent rates and threshold voltages of all the pH values at different temperatures of the ISFET sensor under study. A temperature sensor is also used in this scheme to monitor the temperature variation of the measured environment.
Keywords :
compensation; ion sensitive field effect transistors; pH; temperature sensors; ISFET sensor; intelligent drift; intelligent ion-sensitive field effect transistor sensory system; pH values; temperature compensation; temperature compensation scheme; temperature dependent rates; temperature sensor; temperature variation; theoretical compensation model; threshold voltages; compensation; drift; scheme;
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
DOI :
10.1109/CODEC.2012.6509240
