DocumentCode
2069009
Title
Drift and temperature compensation scheme for an intelligent ion-sensitive field effect transistor sensory system
Author
Das, M.P. ; Bhuyan, M.
Author_Institution
Dept. of Electron. & Commun. Eng., Tezpur Univ., Tezpur, India
fYear
2012
fDate
17-19 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
A new intelligent drift and temperature compensation technique leading the conventional ISFET to an Intelligent one is reported in this piece of work. The theoretical compensation model studied here is based on the predefined experimental time dependent and temperature dependent rates and threshold voltages of all the pH values at different temperatures of the ISFET sensor under study. A temperature sensor is also used in this scheme to monitor the temperature variation of the measured environment.
Keywords
compensation; ion sensitive field effect transistors; pH; temperature sensors; ISFET sensor; intelligent drift; intelligent ion-sensitive field effect transistor sensory system; pH values; temperature compensation; temperature compensation scheme; temperature dependent rates; temperature sensor; temperature variation; theoretical compensation model; threshold voltages; compensation; drift; scheme;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location
Kolkata
Print_ISBN
978-1-4673-2619-3
Type
conf
DOI
10.1109/CODEC.2012.6509240
Filename
6509240
Link To Document