Title :
Effect of flatband voltage and surface field on the MOS capacitance under triangular potential well approximation
Author :
Chakraborty, Chandan
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India
Abstract :
In this paper, the effect of flatband voltage shift on the capacitance of an p-type MOS device is theoretically described as functions of surface field, oxide thickness and doping concentrations. The capacitance of the device shows its higher values at lower flatband voltage, higher surface field, thinner gate oxide and lower doping concentration. The results are presented and discussed here.
Keywords :
MIS devices; doping profiles; MOS capacitance; doping concentrations; flatband voltage shift; gate oxide; oxide thickness; p-type MOS device; surface field; triangular potential well approximation; MOS capacitance; Quantum mechanical effects; Triangular well approximation; band bending; fltaband voltage;
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
DOI :
10.1109/CODEC.2012.6509241
