Title :
A detail simulation study on Extended Source Ultra-Thin Body Double-Gated Tunnel FET
Author :
Kanungo, Sayan ; Rahaman, Hafizur ; Gupta, Partha Sarathi ; Dasgupta, P.S.
Author_Institution :
Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Howrah, India
Abstract :
This work presents an extensive simulation study on different design parameters of an Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor structure. The study investigates the effects of different device design parameter variations on electrical parameters like: sub-threshold swing, trans-conductance, ON-state current and OFF-state current. Finally an optimum structure for Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor has been derived from the simulation study, with encouraging results for parameters of interest.
Keywords :
field effect transistors; semiconductor device models; tunnelling; OFF-state current; ON-state current; device design parameter variations; electrical parameters; extended source ultra-thin body double-gated tunnel FET; field effect transistor structure; sub-threshold swing; trans-conductance; BTBT; Sub-threshold Swing; TCAD; TFET; Trans-Conductance;
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
DOI :
10.1109/CODEC.2012.6509242
