A detail simulation study on Extended Source Ultra-Thin Body Double-Gated Tunnel FET

Author

Kanungo, Sayan ; Rahaman, Hafizur ; Gupta, Partha Sarathi ; Dasgupta, P.S.

Author_Institution

Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Howrah, India

fYear

2012

fDate

17-19 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

This work presents an extensive simulation study on different design parameters of an Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor structure. The study investigates the effects of different device design parameter variations on electrical parameters like: sub-threshold swing, trans-conductance, ON-state current and OFF-state current. Finally an optimum structure for Extended Source Ultra Thin Body Double-Gated Tunneling Field Effect Transistor has been derived from the simulation study, with encouraging results for parameters of interest.

Keywords

field effect transistors; semiconductor device models; tunnelling; OFF-state current; ON-state current; device design parameter variations; electrical parameters; extended source ultra-thin body double-gated tunnel FET; field effect transistor structure; sub-threshold swing; trans-conductance; BTBT; Sub-threshold Swing; TCAD; TFET; Trans-Conductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication (CODEC), 2012 5th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4673-2619-3

Type

conf

DOI

10.1109/CODEC.2012.6509242

Filename

6509242