Title :
Frequency-domain characterization of conductance and capacitance of resonant tunneling diode
Author :
Liu, W.Y. ; Steenson, D.P.
Author_Institution :
Agilent Technologies, Ghent, Belgium
Abstract :
An electrical characteristic that exhibits sharp discontinuity in its curve trace cannot be accurately characterized using conventional polynomial regression algorithms. The electrical characteristic of a resonant tunneling diode (RTD) is a typical example with sharp discontinuities in the negative differential resistance regions (NDR regions). The discontinuities in the NDR regions can easily create convergence failure and accuracy problems in frequency-domain simulation. In this paper, a continuity function based technique is proposed to characterize the strongly nonlinear electrical behavior of an RTD in the frequency domain. Particular reference is given to obtain a closed form CAD model that accurately simulates the high-order nonlinearities due to the discontinuities along the curve trace. Experimental evidence reveals that the frequency domain technique can yield a reliable first order estimate of the C-V characteristic
Keywords :
circuit CAD; frequency-domain analysis; microwave diodes; negative resistance; resonant tunnelling diodes; semiconductor device models; C-V characteristic; capacitance; closed form CAD model; conductance; continuity function based technique; convergence failure; frequency-domain characterization; frequency-domain simulation; high-order nonlinearities; negative differential resistance regions; resonant tunneling diode; strongly nonlinear electrical behavior; Capacitance; Convergence; Diodes; Electric resistance; Electric variables; Frequency domain analysis; Frequency estimation; Polynomials; Resonant tunneling devices; Yield estimation;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974326