Millimeter-wave and noise properties of Si∼Si1−xGex heterojunction double-drift region MITATT devices at 94 GHz

Author

Banerjee, Sean ; Acharyya, Amit ; Banerjee, J.P.

Author_Institution

Dept. of Electron. & Commun., West Bengal Univ. of Technol., Hooghly, India

fYear

2012

fDate

17-19 Dec. 2012

Firstpage

1

Lastpage

3

Abstract

The authors have made an attempt to study the millimeter-wave properties and noise performance of Si~Si_1-xGe_x anisotype heterojunction Double-Drift Region (DDR) Mixed Tunneling Avalanche Transit Time (MITATT) devices operating at 94 GHz. A computer simulation technique based on driftdiffusion model is used for the present study. Two different mole fractions, x = 0.1 and x = 0.3 of Ge and four types of device structure are considered for the simulation. The results show that the n-Si_0.7Ge_0.3~p-Si heterojunction DDR structure of MITATT device excels all other structures as regards DC to RF conversion efficiency (20.15%), CW power output (773.29 mW) and noise measure (33.09 dB).

Keywords

elemental semiconductors; millimetre wave devices; semiconductor materials; silicon; silicon compounds; tunnelling; Si-Si_1-xGe_x; computer simulation technique; device structure; drift-diffusion model; efficiency 20.15 percent; frequency 94 GHz; heterojunction DDR structure; heterojunction double-drift region MITATT devices; millimeter-wave devices; mixed tunneling avalanche transit time devices; noise property; power 773.29 mW; Heterojunction MITATTs; Si1−xGex; low noise MITATTs; noise measure; noise spectral density;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication (CODEC), 2012 5th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4673-2619-3

Type

conf

DOI

10.1109/CODEC.2012.6509243

Filename

6509243