Title :
Millimeter-wave and noise properties of Si∼Si1−xGex heterojunction double-drift region MITATT devices at 94 GHz
Author :
Banerjee, Sean ; Acharyya, Amit ; Banerjee, J.P.
Author_Institution :
Dept. of Electron. & Commun., West Bengal Univ. of Technol., Hooghly, India
Abstract :
The authors have made an attempt to study the millimeter-wave properties and noise performance of Si~Si1-xGex anisotype heterojunction Double-Drift Region (DDR) Mixed Tunneling Avalanche Transit Time (MITATT) devices operating at 94 GHz. A computer simulation technique based on driftdiffusion model is used for the present study. Two different mole fractions, x = 0.1 and x = 0.3 of Ge and four types of device structure are considered for the simulation. The results show that the n-Si0.7Ge0.3~p-Si heterojunction DDR structure of MITATT device excels all other structures as regards DC to RF conversion efficiency (20.15%), CW power output (773.29 mW) and noise measure (33.09 dB).
Keywords :
elemental semiconductors; millimetre wave devices; semiconductor materials; silicon; silicon compounds; tunnelling; Si-Si1-xGex; computer simulation technique; device structure; drift-diffusion model; efficiency 20.15 percent; frequency 94 GHz; heterojunction DDR structure; heterojunction double-drift region MITATT devices; millimeter-wave devices; mixed tunneling avalanche transit time devices; noise property; power 773.29 mW; Heterojunction MITATTs; Si1−xGex; low noise MITATTs; noise measure; noise spectral density;
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
DOI :
10.1109/CODEC.2012.6509243
