• DocumentCode
    2069132
  • Title

    Photoelectric properties of dislocations in Hg1-xCdxTe crystals

  • Author

    Virt, I. ; Kuzma, M.

  • Author_Institution
    Sect. of Exp. Phys., State Pedagogical Univ.
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    325
  • Lastpage
    330
  • Abstract
    Reports results of examinations of photoelectric processes appearing due to growth of dislocations and defects formed by mechanical effects in Hg1-xCdxTe crystals. Energy levels of these defects are calculated. It is also shown that in plastic deformed n-Hg1-xCdxTe crystals, charge carrier current and recombination properties are determined by the channels of higher electron concentration with energy gap close to the position of injected defects (~52 meV). It is demonstrated that in p-Hg1-xCdx Te crystals the concentration of acceptor levels increases simultaneously with the formation of dislocations; the type of minority charge carriers can be changed by the acceptor levels
  • Keywords
    II-VI semiconductors; cadmium compounds; dislocation density; electron density; electron-hole recombination; energy gap; mercury compounds; minority carriers; photoconductivity; photoelectromagnetic effects; 52 meV; Hg1-xCdxTe; II VI semiconductors; acceptor levels; dislocations; electron concentration; energy gap; minority charge carriers; photoelectric processes; recombination properties; Charge carriers; Conductivity; Crystals; Electron mobility; Impurities; Laser modes; Mercury (metals); Optical pulse generation; Scattering; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
  • Conference_Location
    Vienna
  • Print_ISBN
    0-7803-7049-X
  • Type

    conf

  • DOI
    10.1109/EDMO.2001.974328
  • Filename
    974328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2069132