Title :
Photoelectric properties of dislocations in Hg1-xCdxTe crystals
Author :
Virt, I. ; Kuzma, M.
Author_Institution :
Sect. of Exp. Phys., State Pedagogical Univ.
Abstract :
Reports results of examinations of photoelectric processes appearing due to growth of dislocations and defects formed by mechanical effects in Hg1-xCdxTe crystals. Energy levels of these defects are calculated. It is also shown that in plastic deformed n-Hg1-xCdxTe crystals, charge carrier current and recombination properties are determined by the channels of higher electron concentration with energy gap close to the position of injected defects (~52 meV). It is demonstrated that in p-Hg1-xCdx Te crystals the concentration of acceptor levels increases simultaneously with the formation of dislocations; the type of minority charge carriers can be changed by the acceptor levels
Keywords :
II-VI semiconductors; cadmium compounds; dislocation density; electron density; electron-hole recombination; energy gap; mercury compounds; minority carriers; photoconductivity; photoelectromagnetic effects; 52 meV; Hg1-xCdxTe; II VI semiconductors; acceptor levels; dislocations; electron concentration; energy gap; minority charge carriers; photoelectric processes; recombination properties; Charge carriers; Conductivity; Crystals; Electron mobility; Impurities; Laser modes; Mercury (metals); Optical pulse generation; Scattering; Tellurium;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974328
