Title :
Performance improvement of La2O3/p-GaAs MOS capacitor by using Si pasivation layer
Author :
Das, Aruneema ; Chattopadhyay, Subrata ; Dalapati, Goutam Kumar
Author_Institution :
Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India
Abstract :
The RF sputtered La2O3/ p-GaAs MOS capacitors with and without Si interface passivation layer (IPL) have been fabricated and characterized. It has been observed that the presence of (La2O3)1-x(SiO2)x at the interface improved the device characteristics in terms of oxide capacitance (~3.3 fF/μm2), frequency dispersion (~8%) and interface state density (~1.2×1012 cm-2 eV-1). The best device performance was obtained for Al/ La2O3/Si/p-GaAs samples annealed at 500oC.
Keywords :
III-V semiconductors; MOS capacitors; annealing; elemental semiconductors; gallium arsenide; lanthanum compounds; passivation; silicon; sputter deposition; IPL; La2O3-GaAs-Si; MOS capacitor; RF sputtering; annealing; frequency dispersion; interface passivation layer; interface state density; oxide capacitance; temperature 500 degC; GaAs; La2O3; Si passivation; interface state density;
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
DOI :
10.1109/CODEC.2012.6509248
