LPE grown GaAs1−xNx (x ≤ 0.01) for photoconductive devices

Dilute GaAsN layers are grown by liquid phase epitaxy technique from a GaAs + Ga + GaN melt with upto 2 mol% Li₃N added to the same to act as a flux to promote nitrogen dissolution in Ga. A maximum nitrogen content of 1 at% in the material is obtained as measured by high resolution X-ray diffraction studies. Further 10 K photoluminescence measurements showed a band gap reduction of 145 meV in the as-grown layers. The material has been used to fabricate metal-semiconductor-metal photodiodes with a peak response of 0.06 A/W at 858 nm wavelength.