Title :
Performance and Large Signal Modelling of a GaAs Heterojunction Bipolar Transistor Mixer at 950MHz
Author :
Xavier, B.A. ; Aitchison, C.S.
Author_Institution :
Brunel University, Dept of Electrical & Electronic Engineering, Uxbridge, Middx, U.K, UB8 3PH.
Abstract :
A GaAs heterojunction bipolar transistor (HBT) single ended active mixer is discussed. Simulations are performed using a large signal HBT model. A novel way of incorporating the d.c equations of an HBT into a large signal simulator is described. Both conversion gain and intermodulation properties are predicted to within ±3dB of measured values. The measured intermodulation performance of the device in a tuned state is superior to both a resistive MESFET and HEMT mixer.
Keywords :
Circuit simulation; Diodes; Energy consumption; Equations; Gain measurement; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MESFETs; Microwave devices;
Conference_Titel :
Microwave Conference, 1992. 22nd European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1992.335869
