Title :
A 4-mW8-b 600-MS/s 2-b-per-cycle SAR ADC with a capacitive DAC
Author :
Jian Mei ; Jixuan Xiang ; Huabin Chen ; Ye Fan ; Junyan Ren
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
A 4-mW 8-b 600-MS/s 2-b-per-cycle (2 b/C) successive approximation register (SAR) analog-to-digital converter (ADC) is simulated in a standard 65-nm CMOS. By adopting reference capacitive DAC, four-input comparator and the data calibration unit, the proposed ADC could achieve higher speed. As simulated at sampling rate of 600 MS/s, the proposed ADC could achieve a peak SNR of 52.7 dB and maintain ENOB higher than 7.5 bits up to 302-MHz input signal frequency. The FoM of proposed ADC is 34.5 fJ/conversion-step at a 600-MS/s sampling rate and a 1.2-V supply.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; digital-analogue conversion; FoM; SAR ADC; data calibration unit; four-input comparator; power 4 mW; reference capacitive DAC; size 65 nm; standard CMOS process; successive approximation register analog-to-digital converter; voltage 1.2 V; word length 8 bit; Arrays; Calibration; Capacitors; Clocks; Logic arrays; Simulation; Switches;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6812048