• DocumentCode
    2069232
  • Title

    Simulation to study the effect of variation of oxide thickness and substrate doping on DIBL in MOSFET

  • Author

    Das, S. ; Kundu, Sandipan

  • Author_Institution
    Dept. of Comput. Sci. & Eng., SET-West Bengal Univ. of Technol., Kolkata, India
  • fYear
    2012
  • fDate
    17-19 Dec. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, the Drain Induced Barrier Lowering is studied as the function of oxide thickness and substrate doping. The effects are verified simulating with TCAD Sentaurus toolkit. High-K dielectric material is used in place of SiO2. Also investigation of the effect of change in substrate doping on Drain Induced Barrier Lowering is studied.
  • Keywords
    MOSFET; high-k dielectric thin films; semiconductor doping; DIBL; MOSFET; TCAD Sentaurus toolkit; drain induced barrier lowering; high-k dielectric material; oxide thickness variation effect; substrate doping; Drain Induced Barrier Lowering; High-K dielectric; Simulation; Substrate doping; TCAD Sentaurus;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computers and Devices for Communication (CODEC), 2012 5th International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4673-2619-3
  • Type

    conf

  • DOI
    10.1109/CODEC.2012.6509251
  • Filename
    6509251
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2069232