Title :
Simulation to study the effect of variation of oxide thickness and substrate doping on DIBL in MOSFET
Author :
Das, S. ; Kundu, Sandipan
Author_Institution :
Dept. of Comput. Sci. & Eng., SET-West Bengal Univ. of Technol., Kolkata, India
Abstract :
In this work, the Drain Induced Barrier Lowering is studied as the function of oxide thickness and substrate doping. The effects are verified simulating with TCAD Sentaurus toolkit. High-K dielectric material is used in place of SiO2. Also investigation of the effect of change in substrate doping on Drain Induced Barrier Lowering is studied.
Keywords :
MOSFET; high-k dielectric thin films; semiconductor doping; DIBL; MOSFET; TCAD Sentaurus toolkit; drain induced barrier lowering; high-k dielectric material; oxide thickness variation effect; substrate doping; Drain Induced Barrier Lowering; High-K dielectric; Simulation; Substrate doping; TCAD Sentaurus;
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
DOI :
10.1109/CODEC.2012.6509251
