A High Performance PD SOI CMOS Single-Pole Double-Throw T/R Switch for 2.4GHz Wireless Applications

Author

Chen, Lei ; Tian, Liang ; Zhou, Jin ; Huang, Ai-Bo ; Lai, Zongsheng

Author_Institution

Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China

fYear

2009

fDate

24-26 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

A single-pole double-throw (SPDT) T/R switch is designed in a PD SOI CMOS process for 2.4 GHz wireless applications. Based on the advantage of PD SOI device structure, the presented switch gets a high performance on insertion loss and isolation. Process and device characteristics are studied in detail, including floating body effect, substrate crosstalk reduction and on-resistivity trade-off. The designed SPDT switch has an insertion loss of -1 dB and isolation of 40 dB at 2.4 GHz frequency, respectively.

Keywords

MOSFET; UHF devices; isolation technology; low noise amplifiers; silicon-on-insulator; switches; PD SOI CMOS; SPDT switch; floating body effect; frequency 2.4 GHz; insertion loss; on-resistivity trade-off; single-pole double-throw T/R switch; substrate crosstalk reduction; Access protocols; Authentication; Communication system security; Costs; Cryptographic protocols; Databases; Information security; RFID tags; Radiofrequency identification; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09. 5th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3692-7

Electronic_ISBN

978-1-4244-3693-4

Type

conf

DOI

10.1109/WICOM.2009.5300905

Filename

5300905