Title :
A simple analytical model of silicon on insulator tunnel FET
Author :
Kanungo, Sayan ; Rahaman, Hafizur ; Gupta, Partha Sarathi ; Dasgupta, P.S.
Author_Institution :
Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Howrah, India
Abstract :
An analytical model for the 2D potential distribution in sub-threshold regime of operation of a SOI TFET structure under the assumption of a sinusoidal potential distribution in the direction perpendicular to the gate in the middle portion of the channel is developed. Role of any charge on the channel potential is neglected. The model predicts the transfer characteristics of the device with reasonable accuracy.
Keywords :
field effect transistors; semiconductor device models; silicon-on-insulator; 2D potential distribution; SOI TFET structure; Si; channel potential; middle portion; silicon on insulator; simple analytical model; sinusoidal potential distribution; sub-threshold regime; tunnel FET; Band to band tunneling; SOI-TFET; Sub-threshold Swing; TCAD;
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
DOI :
10.1109/CODEC.2012.6509256
