DocumentCode
2069516
Title
BCB with nano-filled BaSrTiO3 for thin film capacitors
Author
Töpper, Michael ; Fischer, Thorsten ; Zang, Marcus ; Teipel, Ulrich ; Fehrenbacher, Ulrich ; Reichl, Herbert
Author_Institution
Fraunhofer IZM, Berlin
fYear
2009
fDate
26-29 May 2009
Firstpage
784
Lastpage
792
Abstract
A BaSrTiO3-BCB composite was developed for spin-coating to integrate capacitors into multilayer wiring for Wafer Level Packaging (WLP) and System in Package (SiP). The size of nanoscale barium strontium titanate crystallite size was measured as 24 nm. The matrix for the composite was BCB with 63 wt.-% solids dissolved in mesitylene. Various dispersants were tested to find the best surfactant for the stabilization of BaSrTiO3 in mesitylene, which is compatible with BCB. The optimum dispersant was used for preparation of suspensions with a solid loading of 20 - 35 wt.-% BaSrTiO3 dispersed in mesitylene using 5.0 - 10 wt.-% dispersant. The resulting average layer thickness of the cured composite is in the range of 1.7 mum. These films can be easily integrated into existing thin film multilayer built-up wiring structures. The relative dielectric constant epsivr of the investigated BaSrTiO3-BCB composite is 31. The breakdown voltage of the exceeds 170 V for 1.7 mum thickness which equals a dielectric strength of 1.0 MV/cm. High reliability was proven for humidity storage (85degC and 85% rel. humidity, 2000 hrs) and thermal cycling from (AATC from -55degC to +125degC, 2000 cycles).
Keywords
barium compounds; electric breakdown; humidity; multilayers; nanoelectronics; nanostructured materials; organic compounds; permittivity; strontium compounds; system-in-package; thermal management (packaging); thin film capacitors; wafer level packaging; BCB composite; BaSrTiO3; benzocyclobutene; breakdown voltage; dielectric strength; dispersant; humidity storage; mesitylene; multilayer wiring; nanoscale barium strontium titanate crystallite size; optimum dispersant; relative dielectric constant; size 1.7 mum; size 24 nm; spin coating; surfactant; suspensions preparation; system in package; temperature -55 C to 125 C; thermal cycling; thin film capacitor integration; thin film multilayer built-up wiring structure; time 2000 h; voltage 170 V; wafer level packaging; Barium; Capacitors; Dielectric thin films; Humidity; Nonhomogeneous media; Packaging; Solids; Strontium; Wafer scale integration; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4244-4475-5
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2009.5074101
Filename
5074101
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