DocumentCode
2069560
Title
Mid-IR imaging of doped silicon gratings at a decananometer scale
Author
Sedaghat, Zohreh ; Bruyant, Aurelien ; Kazan, Michel ; Vaillant, Julien ; Blaize, Sylvain ; Rochat, Névine ; Chevalier, Nicolas ; Garcia-Caudel, Enric ; Morin, Pierre ; Royer, Pascal
Author_Institution
Lab. de Nanotechnol. et Instrum. Opt., UTT, Troyes, France
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
1
Abstract
However, in a recent paper we have calculated that the phonon confinement occurring in decananometric scale objects such as near-field probes can lead to a drastic modification of the probe´s permittivity. This effect can be very useful as for a range of probe permittivity, much stronger contrast can be expected. To experimentally demonstrate these theoretical expectations, we have built a mid-lR near field microscope and imaged doped Si gratings with a period of 2 μm (fabricated in CEA-LETI) with carefully prepared tungsten tip stuck on a tuning fork. The detection has been done using tips with different radius (30 nm to 100 nm) and a very strong contrast between P doped and P+ doped can be observed for a variety of small-radius probes. An example of highly contrasted profile obtained on the doped silicon grating is shown in the paper.
Keywords
diffraction gratings; elemental semiconductors; infrared imaging; permittivity; silicon; vibrations; CEA-LETI; decananometer scale; doped silicon gratings; mid-IR imaging; mid-lR near field microscope; near-field probes; phonon confinement; probe permittivity; tungsten tip; tuning fork; wavelength 2 mum; Optical imaging; Optical scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location
Munich
ISSN
Pending
Print_ISBN
978-1-4577-0533-5
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/CLEOE.2011.5943087
Filename
5943087
Link To Document