Title :
Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET
Author :
Ping Xiang ; Zhihao Ding ; Guangxi Hu ; Hui Chol Ri ; Ran Liu ; Lingli Wang ; Xing Zhou
Author_Institution :
ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
Abstract :
Analytic models for channel potential and the subthreshold swing of the dual-material double-gate (DMDG) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. To avoid the complexity of the computation, Poisson´s equation (PE) is solved through the entire channel region, and an analytic expression for electric potential is obtained. Based on the potential model, subthreshold swing is obtained. Model results match with Medici simulations very well. The results will provide some guidance for the application of the device in integrated circuits.
Keywords :
MOSFET; Poisson equation; electric potential; semiconductor device models; DMDG; Medici simulations; Poisson equation; analytic expression model; channel potential; channel region; computational complexity; dual-material double-gate MOSFET; electric potential model; integrated circuits; metal-oxide-semiconductor field-effect transistor; subthreshold swing; Analytical models; Electric potential; Integrated circuit modeling; Logic gates; MOSFET; Materials; Mathematical model;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6812065
