Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET

Author

Ping Xiang ; Zhihao Ding ; Guangxi Hu ; Hui Chol Ri ; Ran Liu ; Lingli Wang ; Xing Zhou

Author_Institution

ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China

fYear

2013

fDate

28-31 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

Analytic models for channel potential and the subthreshold swing of the dual-material double-gate (DMDG) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. To avoid the complexity of the computation, Poisson´s equation (PE) is solved through the entire channel region, and an analytic expression for electric potential is obtained. Based on the potential model, subthreshold swing is obtained. Model results match with Medici simulations very well. The results will provide some guidance for the application of the device in integrated circuits.

Keywords

MOSFET; Poisson equation; electric potential; semiconductor device models; DMDG; Medici simulations; Poisson equation; analytic expression model; channel potential; channel region; computational complexity; dual-material double-gate MOSFET; electric potential model; integrated circuits; metal-oxide-semiconductor field-effect transistor; subthreshold swing; Analytical models; Electric potential; Integrated circuit modeling; Logic gates; MOSFET; Materials; Mathematical model;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2013 IEEE 10th International Conference on

Conference_Location

Shenzhen

ISSN

2162-7541

Print_ISBN

978-1-4673-6415-7

Type

conf

DOI

10.1109/ASICON.2013.6812065

Filename

6812065