DocumentCode
2069676
Title
Three-dimensional on-chip inductor design based on through-silicon vias
Author
Feng Liang ; Si-Qi Zhao ; Aobo Chen ; Gaofeng Wang
Author_Institution
Inst. of Appl. Phys., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2013
fDate
28-31 Oct. 2013
Firstpage
1
Lastpage
3
Abstract
In this paper two kinds of three-dimensional (3D) on-chip inductor structures based on through-silicon vias (TSVs) are presented, which are quite suitable for applications in 3D integrated circuits. Their electromagnetic characteristics are analyzed by full-wave electromagnetic simulations and compared to those of planar spiral inductors. The results reveal that the 3D inductors based on TSVs have much smaller area as compared to the planar spiral inductors with the same inductance.
Keywords
inductors; three-dimensional integrated circuits; 3D integrated circuits; 3D on-chip inductor design; full wave electromagnetic simulations; planar spiral inductors; through silicon vias; Inductance; Inductors; Spirals; Substrates; System-on-chip; Three-dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location
Shenzhen
ISSN
2162-7541
Print_ISBN
978-1-4673-6415-7
Type
conf
DOI
10.1109/ASICON.2013.6812066
Filename
6812066
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