Study of steady and transient thermal behavior of high power semiconductor lasers

High power semiconductor lasers have found increasing applications in many areas. The junction temperature rise may not only affect output power, slope efficiency, threshold current and lifetime, but also cause spectral broadening and wavelength shift, which makes thermal management one of the major obstacles of pump laser development. Therefore, developing optimized thermal design solution becomes especially important and critical. By means of numerical simulation method, the steady and transient thermal behavior of a single-bar CS-packaged 60 W 808 nm laser in continuous-wave state has been investigated in this work. Thermal resistance and its compositions have been quantitatively analyzed. Guided by the numerical simulation and analytical results, a series of high power semiconductor lasers with good performances have been produced.