• DocumentCode
    2069712
  • Title

    Molecular dynamics simulation of defects in α-Al2O 3

  • Author

    Rambaut, C. ; Jaffrezic, H. ; Kohanoff, J. ; Fayeulle, S.

  • Author_Institution
    Ecole Centrale de Lyon, Ecully, France
  • Volume
    1
  • fYear
    1997
  • fDate
    19-22, Oct 1997
  • Firstpage
    105
  • Abstract
    The defect structure of doped sapphire plays an important role on its dielectric properties and, in particular, on the electrical charges trapping mechanisms. The characterization of the defects associated with the presence of Mg, Cr, Fe and Ti in sapphire is determined using Molecular Dynamics simulation
  • Keywords
    crystal defects; molecular dynamics method; sapphire; α-Al2O3; Al2O3:Cr; Al2O3:Fe; Al2O3:Mg; Al2O3:Ti; defect structure; dielectric properties; doped sapphire; electrical charge trapping; molecular dynamics simulation; Chromium; Dielectrics; Equations; Iron; Lattices; Mechanical factors; Physics; Polarization; Solids; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 1997. IEEE 1997 Annual Report., Conference on
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-3851-0
  • Type

    conf

  • DOI
    10.1109/CEIDP.1997.634571
  • Filename
    634571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2069712