Title :
Molecular dynamics simulation of defects in α-Al2O 3
Author :
Rambaut, C. ; Jaffrezic, H. ; Kohanoff, J. ; Fayeulle, S.
Author_Institution :
Ecole Centrale de Lyon, Ecully, France
Abstract :
The defect structure of doped sapphire plays an important role on its dielectric properties and, in particular, on the electrical charges trapping mechanisms. The characterization of the defects associated with the presence of Mg, Cr, Fe and Ti in sapphire is determined using Molecular Dynamics simulation
Keywords :
crystal defects; molecular dynamics method; sapphire; α-Al2O3; Al2O3:Cr; Al2O3:Fe; Al2O3:Mg; Al2O3:Ti; defect structure; dielectric properties; doped sapphire; electrical charge trapping; molecular dynamics simulation; Chromium; Dielectrics; Equations; Iron; Lattices; Mechanical factors; Physics; Polarization; Solids; Ultrafast optics;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1997. IEEE 1997 Annual Report., Conference on
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3851-0
DOI :
10.1109/CEIDP.1997.634571
