Analysis of Microstrip Discontinuities in Multilayered Semiconductor Substrates

The equivalent circuits and the scattering parameters of microstrip open-end, gap and crossover discontinuities are calculated in the case in which the conducting strips are embedded in a stratified substrate consisting of layers of insulator and/or semiconductor materials. The capacitances and conductances appearing in the equivalent circuits of the discontinuities are obtained in terms of the complex excess charge densities on the conducting strips. These excess charge densities are numerically computed for each discontinuity by using the Galerkin method in the spectral domain. Results are presented to show the effect of semiconductor losses on the behaviour of the microstrip discontinuities analysed.