DocumentCode
2069891
Title
Integration of a temporary carrier in a TSV process flow
Author
Charbonnier, J. ; Cheramy, S. ; Henry, D. ; Astier, A. ; Brun, J. ; Sillon, N. ; Jouve, A. ; Fowler, S. ; Privett, M. ; Puligadda, R. ; Burggraf, J. ; Pargfrieder, S.
Author_Institution
CEA, MINATEC, Grenoble
fYear
2009
fDate
26-29 May 2009
Firstpage
865
Lastpage
871
Abstract
Three-dimensional (3-D) wafer stacking technologies offer new possibilities in terms of device architecture and miniaturization. To stack wafers, reliable through-silicon vias (TSVs) and interconnections must be processed into ultrathin wafers, and such processing is made possible by new methods for wafer handling. Of the different wafer-level bonding techniques, temporary wafer bonding adhesives can offer a variety of properties sufficient for withstanding the TSV processes: flow properties, mechanical strength, thermal stability, chemical resistance, and easy debonding and cleaning processes. This paper demonstrates that, contrary to tapes and waxes currently used for temporary bonding, a new removable high-temperature adhesive meets all the requirements named above for reliable TSV processing on 8-inch active wafers. We will first describe formation of TSVs with aspect ratios of 1:1 and 2:1 into thinned wafers.
Keywords
adhesion; elemental semiconductors; integrated circuit interconnections; mechanical strength; silicon; thermal stability; wafer bonding; 3D wafer stacking technologies; Si; TSV process flow; chemical resistance; flow properties; interconnections; mechanical strength; removable high-temperature adhesive; temporary carrier; temporary wafer bonding adhesives; thermal stability; through-silicon vias; ultrathin wafers; wafer handling; wafer-level bonding; Bonding processes; Chemical processes; Cleaning; Mechanical factors; Silicon; Stacking; Thermal resistance; Thermal stability; Through-silicon vias; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4244-4475-5
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2009.5074114
Filename
5074114
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