DocumentCode
2070144
Title
The effects of Ag, Cu compositions and Zn doping on the electromigration performance of Pb-free solders
Author
Lu, Minhua ; Shih, Da-Yuan ; Lauro, Paul ; Kang, Sung ; Goldsmith, Charles ; Seo, Sun-Kyoung
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY
fYear
2009
fDate
26-29 May 2009
Firstpage
922
Lastpage
929
Abstract
A systematic study of the effect of Ag, Cu and Zn alloying elements on the EM performance of Sn-rich Pb-free solder is reported. EM performance was found to strongly depend on the types of UBMs, alloying elements, compositions, and microstructures in solder. While leaded solders were found to be more robust than Pb-free solders, SnAg solders, in general, has better EM performance than SnCu solders. Greater than 1% Ag in SnAg solder is needed to stabilize the Sn grain microstructure and suppress the rapid diffusion process that drives early EM failures. Cu on top of Ni UBM improves the EM reliability. A minor amount of Zn doping in SnAg solder stabilizes both Ag3Sn and Cu6Sn5 IMC networks in the solder microstructure and slows down the EM process.
Keywords
alloying additions; copper alloys; crystal microstructure; doping; electromigration; silver alloys; solders; zinc alloys; EM reliability; SnAgCuZn; alloying elements; doping; electromigration; grain microstructure; microstructures; rapid diffusion; solder; Doping; Electromigration; Fabrication; Geometry; Gratings; Metrology; Microscopy; Strain measurement; Wafer bonding; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4244-4475-5
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2009.5074123
Filename
5074123
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