DocumentCode :
2070208
Title :
Mechanism of electromigration in Au/Al wirebond and its effects
Author :
Zin, E. ; Michael, N. ; Kang, S.H. ; Oh, K.H. ; Chul, U. ; Cho, J.S. ; Moon, J.T. ; Kim, C.-U.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Texas, Arlington, TX
fYear :
2009
fDate :
26-29 May 2009
Firstpage :
943
Lastpage :
947
Abstract :
This paper presents findings evidencing that electromigration(EM) imparts significant influence on the kinetics of contact failure of Au wire bonded to an Al pad. Contact resistance between Au wire and Al pad at moderately accelerated test conditions (T=150-175degC; j=5times104A/cm2) revealed that the failure rate depends highly on the direction of electron flow across the contact: electron flow from Au to Al resulted in far faster failure rate than the opposite direction. Microscopic inspection of the contact interface indicated that the wirebond contact failure is related to the growth of Au-Al intermetallic compounds (IMC). EM was found to influence the failure kinetics because it accelerates or decelerates the growth rate of the IMC.
Keywords :
alloys; aluminium; contact resistance; gold; lead bonding; Au/Al wirebond; contact failure; contact resistance; electromigration; electron flow; failure kinetics; growth rate; intermetallic compounds; Bonding; Contact resistance; Electromigration; Electrons; Gold; Kinetic theory; Life estimation; Microscopy; Testing; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-4475-5
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2009.5074126
Filename :
5074126
Link To Document :
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