Title :
Effects of width of the quantum well on the shift in transition energy with operating current in InxGa1−xN/GaN quantum well diodes
Author :
Panda, Siddhartha ; Bera, P.P. ; Biswas, D.
Author_Institution :
Inst. of Radiophys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
The influence of the well width and the operating current on the transition energies of InxGa1-xN/GaN quantum well (QW) diodes have been studied through the self consistent solution of the Schrödinger and Poisson equations. Large blue shift of the emission energy is observed due to the reduction in the well width. With increase in the current density the emission peak shifts toward higher energy. This shift, which is a major disadvantage of the lighting devices, is minimized by decreasing the width of the QW.
Keywords :
III-V semiconductors; Schrodinger equation; gallium compounds; indium compounds; semiconductor quantum wells; wide band gap semiconductors; InxGa1-xN-GaN; Poisson equation; Schrödinger equation; emission energy; quantum well diode; self consistent solution; transition energy; Current density; LED; Laser Diode; Quantum well;
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
DOI :
10.1109/CODEC.2012.6509296