DocumentCode :
2070355
Title :
Electronically-tuned optical delay lines in silicon
Author :
Khan, S. ; Fathpour, S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
1
Abstract :
In this work, the properties of the devices in transmission mode are studied and compared with reflection-mode counterparts. The time delay in each case was calculated using the transfer matrix method. The effective refractive index of the sections was determined using the commercial RSoft simulator. A commercial electronic device simulator, ATLAS by Silvaco, was used to determine the carrier concentration in the rib waveguide core at different diode biases. The results on static (e.g., delay tuning range, loss and dispersion) and dynamic (bit rate and switching) properties of the devices are presented and discussed.
Keywords :
elemental semiconductors; light transmission; optical delay lines; optical tuning; optical waveguides; refractive index; rib waveguides; silicon; ATLAS; Si; Silvaco; carrier concentration; commercial RSoft simulator; commercial electronic device simulator; diode biases; electronically-tuned optical delay lines; refractive index; rib waveguide core; silicon; transfer matrix; transmission mode; Photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
ISSN :
Pending
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
Type :
conf
DOI :
10.1109/CLEOE.2011.5943122
Filename :
5943122
Link To Document :
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