DocumentCode
2070443
Title
Ways of the increasing of a depth of modulation and homogeneity of modulation in semiconductor modulators of the IR-radiation
Author
Irkha, V. ; Vikulin, I. ; Gorbachev, V.
Author_Institution
Odessa Nat. Acad. of Telecommun., Ukraine
fYear
2004
fDate
28-28 Feb. 2004
Firstpage
494
Abstract
The different constructive solution for reducing of inhomogeneity of a modulation factors and heightening its efficiency in semiconductor modulators are considered. Thus, the better homogeneity of a modulation factor and the great depth of a modulation we have achieved by the optimization of geometry of modulators and usage of different semiconductor materials.
Keywords
geometry; modulators; optimisation; p-n junctions; semiconductor device manufacture; semiconductor materials; IR radiation; geometry optimization; heightening; inhomogeneity; modulation depth; modulation factors; modulation homogeneity; p-n junctions; semiconductor materials; semiconductor modulators; Apertures; Charge carriers; Crystallization; Germanium; Modular construction; Ohmic contacts; Optical modulation; Semiconductor diodes; Shape; Structural beams;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications and Computer Science, 2004. Proceedings of the International Conference
Conference_Location
Lviv-Slavsko, Ukraine
Print_ISBN
966-553-380-0
Type
conf
Filename
1366041
Link To Document