Title :
Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation
Author :
Antonova, Irina V. ; Gulyaev, Mitrofan B. ; Skuratov, Vladimir A. ; Marin, Denis V. ; Zaikina, Elvira V. ; Yanovitskaya, Zoya S. ; Goldstein, Yehuda ; Jedrzejewski, Jedzzey
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk
Abstract :
The samples with layer of silicon nanocrystals ncSi embedded in SiO2 (the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO2-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.
Keywords :
elemental semiconductors; ion implantation; nanostructured materials; nanotechnology; photoluminescence; silicon; Si-SiO2; high energy ion implantation; nanocrystals; oxide matrix; photoluminescence; silicon; Annealing; CMOS technology; Capacitance-voltage characteristics; Chemical technology; Ion implantation; Nanocrystals; Nanoparticles; Photoluminescence; Physics; Silicon;
Conference_Titel :
Electronics and Photonics, 2006. MEP 2006. Multiconference on
Conference_Location :
Guanajuato
Print_ISBN :
1-4244-0627-7
Electronic_ISBN :
1-4244-0628-5
DOI :
10.1109/MEP.2006.335625
