Title :
GeSn/SiGeSn RCE photodetectors: A comparative study based on Franz-Keldysh effect and quantum confined stark effect
Author :
Chakraborty, Vedatrayee ; Mukhopadhyay, Bodhibrata ; Basu, Palash Kumar
Author_Institution :
Inst. of Radiophys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
Ge-based photodetectors are currently studied for providing cheap solution to long haul and short distance communication and optical interconnects. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. We have worked on resonant cavity enhanced (RCE) photodetectors using GeSn/SiGeSn type I structure. Performance of photodetectors using strong Quntum Confined Stark Effect, and Franz-Keldysh Effect in these structures and properties related to photodetection are studied in this paper.
Keywords :
cavity resonators; germanium compounds; optical interconnections; photodetectors; quantum confined Stark effect; silicon compounds; Franz-Keldysh effect; GeSn-SiGeSn; RCE photodetector; direct gap type I band alignment; optical interconnection; quantum confined stark effect; resonant cavity enhancement; tensile strained layer; FKE; MQW; QCSE; electroabsorption; electrorefraction; exciton;
Conference_Titel :
Computers and Devices for Communication (CODEC), 2012 5th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-2619-3
DOI :
10.1109/CODEC.2012.6509304
