UWB transmitter in BiCMOS SiGe 0.13 μm technology for 60 GHz WLAN communication

Author

Devulder, M. ; Deparis, N. ; Telliez, I. ; Pruvost, S. ; Danneville, F. ; Rolland, N. ; Rolland, P.A.

Author_Institution

STMicroelectron., Crolles

fYear

2007

fDate

24-26 Sept. 2007

Firstpage

432

Lastpage

435

Abstract

This paper presents a 60 GHz ultra-wideband (UWB) transceiver for indoor communication using SiGe BiCMOS technology. To simplify the design, the transmitter architecture is based on single-ended functions. This work describes a single-pole single-throw (SPST) switch and a low noise amplifier (LNA) at 60 GHz. These two circuits were designed in SiGe BiCMOS 0.13 μm technology. The RF-switch presents a 40 dB ON/OFF ratio at 60 GHz and the LNA exhibits a 16 dB gain and a noise figure of 8 dB.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; indoor communication; integrated circuit design; low noise amplifiers; ultra wideband communication; wireless LAN; BiCMOS; RF-switch; SiGe; UWB transmitter; WLAN communication; frequency 60 GHz; gain 16 dB; indoor communication; low noise amplifier; noise figure 8 dB; single-pole single-throw switch; size 0.13 μm; ultrawideband transceiver; BiCMOS integrated circuits; Communication switching; Germanium silicon alloys; Indoor communication; Silicon germanium; Switches; Transceivers; Transmitters; Ultra wideband technology; Wireless LAN; 60 GHz; Low Noise Amplifier (LNA); SiGe; Sliding correlation; Switch; UWB; WLAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband, 2007. ICUWB 2007. IEEE International Conference on

Conference_Location

Singapore

Print_ISBN

978-1-4244-0520-6

Electronic_ISBN

978-1-4244-0521-3

Type

conf

DOI

10.1109/ICUWB.2007.4380983

Filename

4380983