Title :
Coupling between metallic microstrips on dielectric sustrates
Author :
Tecpoyotl-Torres, M. ; Benítez-Ruíz, N. ; Torres-Cisneros, M. ; Ibarra-Manzano, O. ; May-Arrioja, D. ; Sànchez-Mondragón, J.
Author_Institution :
Res. Centre for Eng. & Appl. Sci., Autonomous State Univ. of Morelos, Mexico City
Abstract :
The analysis and simulation of the coupling between microstrips is realized, showing the corresponding capacitive or inductive walls. We analyze their interference and the changes produced in the electric and magnetic fields, as well as the distance dependence of the interference. The conductive lines on silicon and their crosstalk, produced when their distance is shorter that their width, is considered. The simulations were carried out with FEMLAB.
Keywords :
crosstalk; dielectric materials; elemental semiconductors; finite element analysis; microstrip lines; semiconductor-metal boundaries; silicon; FEMLAB; Si; capacitive walls; conductive lines; crosstalk; dielectric substrates; electric fields; inductive walls; magnetic fields; metallic microstrips; Dielectrics; Equations; Interference; Magnetic analysis; Magnetic separation; Microstrip; Optical crosstalk; Permittivity; Silicon; Strips;
Conference_Titel :
Electronics and Photonics, 2006. MEP 2006. Multiconference on
Conference_Location :
Guanajuato
Print_ISBN :
1-4244-0627-7
Electronic_ISBN :
1-4244-0628-5
DOI :
10.1109/MEP.2006.335630
