The influence of dc bias an dielectric properties of thin sputtered tantalum oxide films

Author

Miyairi, K.

Author_Institution

Fac. of Eng., Shinshu Univ., Nagano, Japan

Volume

1

fYear

1997

fDate

19-22, Oct 1997

Firstpage

125

Abstract

The influence of dc bias on the dielectric properties of thin rf-sputtered tantalum oxide films. The oxide layer thickness of the standard samples sandwiched between aluminum electrodes is in the range of 40-460 nm. The dielectric constant and dielectric loss tangent (tan δ) in the high frequency range above 1 kHz show similar values to those published in articles, however their values are larger by two or three times in the low frequency and high temperature ranges. Besides, the dc bias gives a slight increase in the dielectric constant and also dielectric loss tangent. The response of this increase for the dc bias imposed to the signal is in the order of 10-100 sec which is relatively fast compared to the ionic hetero space charge behaviors. This phenomena is tentatively interpreted in terms of two site hopping polarization of space charges modified by injected charges from the electrodes

Keywords

dielectric losses; dielectric thin films; permittivity; space charge; sputtered coatings; tantalum compounds; 1 kHz; 40 to 460 nm; DC bias; RF sputtering; Ta₂O₅; charge injection; dielectric constant; dielectric loss tangent; dielectric properties; hopping polarization; ionic hetero space charge; tantalum oxide thin film; Aluminum; Dielectric constant; Dielectric losses; Dielectric thin films; Electrodes; Extraterrestrial phenomena; Frequency; Polarization; Space charge; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation and Dielectric Phenomena, 1997. IEEE 1997 Annual Report., Conference on

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-3851-0

Type

conf

DOI

10.1109/CEIDP.1997.634575

Filename

634575