Modelling of the power pin diode under surge current conditions

Fast recovery silicon (Si) power diodes, having radiation induced recombination centres, operating under forward bias at large current densities and high temperatures, have been studied in a detailed way, both experimentally and with the help of device simulation Medici package. The comparison of the dynamic I-V characteristics with the results of numerical simulations is possible only when all the specific features of the measurement set-up are taken into account in the simulations. Such evaluation of the electro-thermal numerical model of the diode under experiment combined with the electro-thermal model of the experimental set-up as the boundary condition for Medici simulation is being presented. The main issue is the definition of the thermal boundary conditions.