DocumentCode :
2070885
Title :
Effect of quanum-well potential shape on the overbarrier resonant hole states
Author :
Polupanov, Alexander F. ; Kruglov, Alexis N.
Author_Institution :
Inst. for Radio-Eng. & Electron., Russian Acad. of Sci., Moscow
fYear :
2006
fDate :
7-10 Nov. 2006
Firstpage :
102
Lastpage :
105
Abstract :
One or several resonant hole states related to the absolute reflection at hole scattering on a quantum well were found to exist in the energy range where only heavy holes may propagate over barriers in a quantum-well heterostructure. Energies of resonant states are close to those of peaks of absolute reflection. The qualitative behaviour of the over-barrier scattering and resonant states is the same at variation of quantum well shape and depth, however lifetimes of resonant states depend strongly on all parameters. These long-lived resonant states may be one of the reasons for the efficient hole capture by quantum wells.
Keywords :
carrier lifetime; resonant states; semiconductor quantum wells; absolute hole scattering reflection; hole capture; over-barrier resonant hole states; quantum-well heterostructure; quanum-well potential shape; resonant state lifetimes; semiconductor quantum wells; Optical propagation; Optical reflection; Particle scattering; Pattern analysis; Quantum mechanics; Quantum wells; Resonance light scattering; Scattering parameters; Schrodinger equation; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Photonics, 2006. MEP 2006. Multiconference on
Conference_Location :
Guanajuato
Print_ISBN :
1-4244-0627-7
Electronic_ISBN :
1-4244-0628-5
Type :
conf
DOI :
10.1109/MEP.2006.335639
Filename :
4135723
Link To Document :
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