Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Author

Hasan, Md Tanvir ; Asano, Takashi ; Tokuda, Hirokuni ; Kuzuhara, Masaaki

Author_Institution

Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan

Volume

34

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

1379

Lastpage

1381

Abstract

Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors having identical breakdown voltages but with different field plate (FP) lengths. The results indicated that applying more positive ON-state gate biases resulted in pronounced recovery in the dynamic ON-resistance for the FP device, whereas no gate-bias effects were observed for the device without FP. The mechanism responsible for the reduced current collapse by FP is proposed, in which the key role is played during ON-state by the quick field-effect recovery of partial channel depletion caused by electron trapping at AlGaN surface states between gate and drain.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; surface states; wide band gap semiconductors; AlGaN-GaN; HEMT; breakdown voltages; current collapse suppression; dynamic ON-resistance recovery; electron trapping; gate field-plate; high-electron-mobility transistors; partial channel depletion; positive ON-state gate biases; quick field-effect recovery; surface states; Aluminum gallium nitride; Current measurement; Gallium nitride; HEMTs; Logic gates; MODFETs; Voltage measurement; AlGaN/GaN high-electron-mobility transistors (HEMT); ON-resistance; current collapse; field plate (FP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2280712

Filename

6606834