Title :
NAND Flash memory: The driving technology in digital storage - Overview and challenges
Author_Institution :
SanDisk - Milpitas, Milpitas, CA, USA
Abstract :
Summary form only given. Nand Flash memory is the NVM technology of choice for solid storage devices. This talk will give an introduction to Flash Non Volatile Memory (NVM). For completeness the talk will also present Nor Flash as well as the roles for Nand and Nor Flash. The second part of the talk will be focused on issues related to reliability and endurance, and current solutions and future challenges. Despite the advantages, NAND-based storage systems are not without challenges. For the next decade, Flash storage systems are expected to provide solutions with reduced product costs, further improved read/write performance at low power consumption, as well as better data integrity for the users. Growth in storage demand is phenomenal, which leads to the adoption of more aggressive technology to keep cost reasonable. This further leads to using smaller cells (~10nm in geometry), as well as more bits/cell to improve storage density, as well as cost. Newer physical storage media requires closer system-level interaction to make the system feasible for reliable data storage solution. State-of-the-art error correcting coding (ECC) solution, as well as advanced memory signal processing (MSP) techniques, will be deployed to make future flash media reliable for all data storage customers. In addition, new system solutions will provide the NAND-based storage system longer endurance and better data retention. The talk will conclude with a discussion of challenges that require significant research.
Keywords :
NAND circuits; error correction codes; flash memories; integrated circuit reliability; low-power electronics; random-access storage; signal processing; ECC; MSP techniques; NAND flash memory; NAND-based storage systems; NOR flash memory; NVM technology; advanced memory signal processing; data integrity; data retention; digital storage; error correcting coding; flash nonvolatile memory; flash storage systems; low power consumption; physical storage media; reduced product costs; solid storage devices; storage density; system-level interaction; Abstracts; Very large scale integration;
Conference_Titel :
VLSI (ISVLSI), 2013 IEEE Computer Society Annual Symposium on
Conference_Location :
Natal
DOI :
10.1109/ISVLSI.2013.6654640