Title :
Erbium doped glass-semiconductor integrated waveguide amplifier
Author :
Irannejad, M. ; Jose, G. ; Pasha, M. ; Steenson, D.P. ; Jiang, Q. ; Zhan, Z.Y. ; Hog, R.A. ; Jha, A.
Author_Institution :
Sch. of Process, Environ., & Mater. Eng., Univ. of Leeds, Leeds, UK
Abstract :
In this work we report a strategy for fabrication and integration of an Er3+-doped phosphate modified tellurite (PT) glass on a GaAs substrate using PLD under reactive oxygen atmosphere. Reactive ion etching (RIE) process is used to define channel waveguides on the glass-semiconductor integrated thin film.
Keywords :
erbium compounds; integrated optics; optical fabrication; optical films; optical glass; optical waveguides; phosphate glasses; pulsed laser deposition; semiconductor optical amplifiers; sputter etching; tellurium compounds; ytterbium compounds; GaAs; GaAs substrate; TeO2-Na2O-P2O5-ZnF2-Er2O3-Yb2O3-Ce2O3; channel waveguides; erbium doped phosphate modified tellurite glass; glass-semiconductor integrated thin film; pulsed laser deposition; reactive ion etching; reactive oxygen atmosphere; semiconductor integrated waveguide amplifier; Photonics; Silicon compounds;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5943177
