Erbium doped glass-semiconductor integrated waveguide amplifier

Author

Irannejad, M. ; Jose, G. ; Pasha, M. ; Steenson, D.P. ; Jiang, Q. ; Zhan, Z.Y. ; Hog, R.A. ; Jha, A.

Author_Institution

Sch. of Process, Environ., & Mater. Eng., Univ. of Leeds, Leeds, UK

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

In this work we report a strategy for fabrication and integration of an Er³⁺-doped phosphate modified tellurite (PT) glass on a GaAs substrate using PLD under reactive oxygen atmosphere. Reactive ion etching (RIE) process is used to define channel waveguides on the glass-semiconductor integrated thin film.

Keywords

erbium compounds; integrated optics; optical fabrication; optical films; optical glass; optical waveguides; phosphate glasses; pulsed laser deposition; semiconductor optical amplifiers; sputter etching; tellurium compounds; ytterbium compounds; GaAs; GaAs substrate; TeO₂-Na₂O-P₂O₅-ZnF₂-Er₂O₃-Yb₂O₃-Ce₂O₃; channel waveguides; erbium doped phosphate modified tellurite glass; glass-semiconductor integrated thin film; pulsed laser deposition; reactive ion etching; reactive oxygen atmosphere; semiconductor integrated waveguide amplifier; Photonics; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5943177

Filename

5943177