Title :
Design of a power amplifier based on GaN HEMTs at Ka-band
Author :
Chao Yue ; Deyong Guo ; Xiaobin Luo ; Lijie Zhou ; Shunyong Du
Author_Institution :
Microwave & Millimeter Wave Lab., Beijing Inst. of Technol., Beijing, China
Abstract :
A GaN power amplifier which can be applied to Ka-band is simulated and studied in the paper. Based on typical AlGaN/GaN HEMT (high electron mobility transistor) pattern, the transistor model is set up by the Silvaco TCAD. The on-chip spiral inductor and metal-insulator-metal (MIM) capacitance are also simulated in HFSS respectively. Extracted from the modal above, s-parameters are used to design a power amplifier circuit. The final result shows that the output power can reach 21.4 dBm and PAE is 18% with 25 V bias voltage and 9 mA static output current at 35 GHz when the input power is 10 dBm.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave power amplifiers; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMTs; HFSS; Ka-band; MIM; S-parameters; Silvaco TCAD; current 9 mA; efficiency 18 percent; frequency 35 GHz; high electron mobility transistor; metal-insulator-metal capacitance; on-chip spiral inductor; power amplifier circuit design; transistor model; voltage 25 V; Aluminum gallium nitride; Circuit stability; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Stability analysis; AlGaN/GaN HEMT; capacitance; inductor; power amplifier;
Conference_Titel :
Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on
Conference_Location :
Qingdao
DOI :
10.1109/ICMTCE.2013.6812396
