Design of a power amplifier based on GaN HEMTs at Ka-band

Author

Chao Yue ; Deyong Guo ; Xiaobin Luo ; Lijie Zhou ; Shunyong Du

Author_Institution

Microwave & Millimeter Wave Lab., Beijing Inst. of Technol., Beijing, China

fYear

2013

fDate

25-28 Aug. 2013

Firstpage

88

Lastpage

91

Abstract

A GaN power amplifier which can be applied to Ka-band is simulated and studied in the paper. Based on typical AlGaN/GaN HEMT (high electron mobility transistor) pattern, the transistor model is set up by the Silvaco TCAD. The on-chip spiral inductor and metal-insulator-metal (MIM) capacitance are also simulated in HFSS respectively. Extracted from the modal above, s-parameters are used to design a power amplifier circuit. The final result shows that the output power can reach 21.4 dBm and PAE is 18% with 25 V bias voltage and 9 mA static output current at 35 GHz when the input power is 10 dBm.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave power amplifiers; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMTs; HFSS; Ka-band; MIM; S-parameters; Silvaco TCAD; current 9 mA; efficiency 18 percent; frequency 35 GHz; high electron mobility transistor; metal-insulator-metal capacitance; on-chip spiral inductor; power amplifier circuit design; transistor model; voltage 25 V; Aluminum gallium nitride; Circuit stability; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Stability analysis; AlGaN/GaN HEMT; capacitance; inductor; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on

Conference_Location

Qingdao

Type

conf

DOI

10.1109/ICMTCE.2013.6812396

Filename

6812396