The distribution of electromagnetic field in plasma

Low temperature plasma technology as a special processing method has been used very widely in semiconductor technology, but when process the wafer which diameter is larger than 300mm, the uniformity of semiconductor wafer will become worse, and then the productivity gets lower. These bad results all attribute to one key reason that the plasma excited by the feeding VHF power does not generate a uniform distribution. In order to solve this problem, this research uses the time domain analysis method to investigate the electromagnetic interaction in plasma by CST simulation. It is found that the uniformity strongly depends on how to feed the VHF power, including the position, the number and the shaped electrode. At the same time, investigating the interaction mechanism can also help finding the distribution and the uniformity of plasma.