Title :
Nucleation, growth, electronic and magnetic properties of epitaxial Co-doped TiO2 anatase
Author :
Chambers, Scott A.
Author_Institution :
Fundamental Sci. Div., Pacific Northwest Nat. Lab., Richland, WA, USA
Abstract :
Co-doped TiO2 anatase (CoxTi1-xO2-x), as grown by oxygen plasma assisted molecular beam epitaxy, has been shown to be strongly ferromagnetic up to ∼700 K. The robust magnetism is tied to the presence of a secondary phase of Co-enriched anatase, which appears as nano- and mesoscale epitaxial particles that nucleate on the surface of continuous anatase epitaxial films. Co in both secondary (concentrated) and primary (dilute) phases substitutes for Ti, and is in the +2 formal oxidation state. The magnetization is proportional to the n-type conductivity, suggesting electron mediated exchange interaction. This material may thus be useful in the rapidly developing field of spintronics for which ferromagnetic semiconductors with Curie points well above room temperature are critically important.
Keywords :
cobalt; electrical conductivity; exchange interactions (electron); ferromagnetic materials; magnetic semiconductors; magnetisation; molecular beam epitaxial growth; nucleation; plasma materials processing; semiconductor epitaxial layers; semiconductor growth; titanium compounds; 700 K; Co doped TiO2 anatase; LaAlO3; Si; TiO2:Co; continuous anatase epitaxial films; electron mediated exchange interaction; electronic properties; ferromagnetic semiconductors; magnetic properties; magnetization; mesoscale epitaxial particles; n-type conductivity; nanoscale epitaxial particles; nucleation; oxidation state; oxygen plasma assisted molecular beam epitaxial growth; primary phases; robust magnetism; secondary phase; Conductivity; Electrons; Elementary particle exchange interactions; Magnetic properties; Magnetization; Molecular beam epitaxial growth; Oxidation; Plasma properties; Robustness; Semiconductor films;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231701