DocumentCode
2071964
Title
Modeling the enhancement of nanoscale MOSFETs by embedding carbon nanotubes in the channel
Author
Akturk, Akin ; Pennington, Gary ; Goldsman, Neil
Author_Institution
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Volume
1
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
24
Abstract
We report on predicting the improvement in conventional nanoscale MOSFET performance that is obtained when Carbon Nanotubes (CNTs) are placed in the device channel. We developed a CNT-MOSFET simulator, using Monte Carlo methods and a quantum drift-diffusion model. The simulation results indicate that performance is enhanced for MOSFETs with zigzag CNTs of diameters which are approximately 8 Å.
Keywords
MOSFET; Monte Carlo methods; carbon nanotubes; nanotube devices; semiconductor device models; 8 Å; Monte Carlo methods; carbon nanotubes; nanoscale MOSFET; quantum drift diffusion model; Acoustic scattering; Carbon nanotubes; Electron mobility; MOSFETs; Monte Carlo methods; Nanoscale devices; Particle scattering; Phonons; Poisson equations; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1231705
Filename
1231705
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