The electrical properties of chemical vapor deposited silicon oxide films for applications as interlayer dielectrics in ULSI

Author

Loiko, Konstantin V. ; Vassiliev, Vladislav Y. ; Chua, Chee Tee ; Lim, David H Y

Author_Institution

Dept. of R&D, Chartered Semicond. Manuf. Ltd., Singapore

Volume

1

fYear

1997

fDate

19-22, Oct 1997

Firstpage

150

Abstract

The electrical properties of plasma-enhanced undoped silicon dioxide and subatmospheric pressure chemical vapor deposited borophosphosilicate glass films used in sub-half-micron ULSI were investigated and compared for 200 mm p-type silicon wafers. The capacitance-voltage (C-V), surface photo voltage (SPV), and current-voltage (I-V) measurement methods were applied for characterization of the film properties. The revealed variation of the charge and current values across the wafer for as-deposited and densified films and its causes are discussed

Keywords

ULSI; borosilicate glasses; characteristics measurement; dielectric thin films; integrated circuit measurement; phosphosilicate glasses; plasma CVD; silicon compounds; 200 mm; B2O3-P2O5-SiO2-SiO2-Si; BPSG-SiO₂-Si; ULSI; capacitance-voltage measurement; current values; current-voltage measurement; densified films; interlayer dielectrics; plasma-enhanced chemical vapor deposition; surface photo voltage measurement; Capacitance-voltage characteristics; Chemicals; Glass; Plasma chemistry; Plasma measurements; Plasma properties; Semiconductor films; Silicon compounds; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation and Dielectric Phenomena, 1997. IEEE 1997 Annual Report., Conference on

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-3851-0

Type

conf

DOI

10.1109/CEIDP.1997.634581

Filename

634581