Title :
A kind of third-harmonic circuits based on GaAs PHEMT at W-band
Author :
Xiaobin Luo ; Chao Yue ; Shunyong Du ; Lijie Zhou ; Xin Lv
Author_Institution :
Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
Abstract :
A third-harmonic circuit is proposed by using GaAs PHEMT at W-band in the paper. The circuit mainly consists of the power amplifier drive unit and frequency multiplier unit. First, the frequency multiplier circuit is designed which can realize third-harmonic amplifying by taking advantage of strong non-linear characteristics of devices. Then the power amplifier including three-stage and two-channel devices is completed which is used to provide enough input signal for the latter frequency multiplier circuit. Finally the whole circuit is formed combining the two units into together and the output signal is obtained through the band-pass filter at W-band. The simulation result shows that the output power may reach 5dBm at 105GHz when the input power is 10dBm at 35GHz.
Keywords :
band-pass filters; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave filters; GaAs; PHEMT; W-band; band-pass filter; f third-harmonic circuits; frequency 105 GHz; frequency 35 GHz; frequency multiplier unit; input signal; nonlinear characteristics; output signal; power amplifier drive unit; two-channel devices; Gallium arsenide; Harmonic analysis; PHEMTs; Power amplifiers; Power generation; Power harmonic filters; Simulation; GaAs PHEMT; W-band; frequency multiplier; power amplifier; third-harmonic;
Conference_Titel :
Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on
Conference_Location :
Qingdao
DOI :
10.1109/ICMTCE.2013.6812430
