Title :
3-D self-consistent simulation of spin-qubit quantum dot circuit with integrated read-out
Author :
Zhang, L.-X. ; Matagne, P. ; Leburton, J.P. ; Hanson, R. ; Kouwenhoven, L.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
We present for the first time a numerical analysis of a novel laterally-coupled quantum dot (LCQD) circuit with integrated quantum point contact (QPC) detectors. Our simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Kohn-Sham equations, using the Slater´s Rule for determining the charging voltage. Detailed results on conduction band profiles, eigenenergy spectra and associated wavefunctions in the dots, sensitivity of the QPC, and stability diagram are discussed for the few-electron charging regime.
Keywords :
III-V semiconductors; Poisson equation; SCF calculations; aluminium compounds; conduction bands; finite element analysis; gallium arsenide; integrated circuits; quantum point contacts; semiconductor device models; semiconductor quantum dots; wave functions; 3D self consistent simulation; AlGaAs-GaAs; Kohn Sham equations; Poisson equation; Slater´s Rule; conduction band profiles; eigenenergy spectra; electron charge; integrated quantum point contact; novel laterally coupled quantum dot; numerical analysis; spin qubit quantum dot; stability diagram; wavefunctions; Carrier confinement; Circuit simulation; Computational modeling; Detectors; Electrons; Gallium arsenide; Poisson equations; Quantum computing; Quantum dots; US Department of Transportation;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231723
