DocumentCode :
2072474
Title :
Fabrication and characterization of horizontally aligned carbon nanotubes for interconnect application
Author :
Chai, Yang ; Xiao, Zhiyong ; Chan, Philip C.H.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
fYear :
2009
fDate :
26-29 May 2009
Firstpage :
1465
Lastpage :
1469
Abstract :
We discuss the use of electron-shading effect during the plasma-enhanced chemical vapor deposition to control the growth of carbon nanotubes (CNTs). We designed and fabricated the trench and island test structures. The horizontally aligned CNTs were grown from the sidewall of the polysilicon structure, parallel to the silicon oxide surface. We investigated the electrical property of the CNT number for the interconnect line application. We also studied the scaling effect of the CNT number. This approach provides a method to implement complex CNT structure by in-stiu growth, and integrate them to realize various electrical devices and interconnect lines.
Keywords :
carbon nanotubes; island structure; plasma CVD; C; carbon nanotubes; electrical property; electron-shading effect; interconnect lines; plasma-enhanced chemical vapor deposition; Carbon nanotubes; Chemical vapor deposition; Fabrication; Plasma applications; Plasma chemistry; Plasma measurements; Plasma temperature; Silicon; Substrates; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-4475-5
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2009.5074205
Filename :
5074205
Link To Document :
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