Title :
A W-Band single-ended downconversion/upconversion gate mixer in InP HEMT technology
Author :
Xiaoxi Ning ; Hongfei Yao ; Xiantai Wang ; Zhi Jin
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
This paper presents an initial design of a single-ended gate mixer in self-developed InP High Electron Mobility Transistor (HEMT) technology and its critical parameters measured from 75 GHz to 110 GHz. This mixer realizes a fair conversion loss between 8 dB to 14 dB in full W-Band both in up and down conversion mode, and a 1-dB input compression points more than 0 dBm with the LO pumped at 89 GHz or 94 GHz. All measurement results above are illustrated and analyzed briefly. In a conclusion, it demonstrates the potentials and possibilities to develop passive mixers in W-Band with this process in more complicated structures.
Keywords :
HEMT circuits; III-V semiconductors; indium compounds; millimetre wave mixers; passive networks; HEMT technology; InP; W-Band single-ended downconversion/upconversion gate mixer; conversion loss; down conversion mode; frequency 75 GHz to 110 GHz; high electron mobility transistor technology; passive mixers; up conversion mode; HEMTs; Indium phosphide; Logic gates; Microwave imaging; Microwave theory and techniques; Mixers; Radio frequency; Downconversion; Gate Mixer; InP HEMT; Passive Mixer; Upconversion; W-Band;
Conference_Titel :
Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on
Conference_Location :
Qingdao
DOI :
10.1109/ICMTCE.2013.6812434
