DocumentCode :
2072666
Title :
Coherence and dephasing in self-assembled quantum dots
Author :
Hvam, J.M. ; Leosson, K. ; Birkedal, D.
Author_Institution :
Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark
Volume :
1
fYear :
2003
fDate :
12-14 Aug. 2003
Firstpage :
122
Abstract :
We measured dephasing times in InGaAlAs self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0 K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneous broadening mechanism in the latter.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; interface states; light coherence; multiwave mixing; phonon-exciton interactions; photoluminescence; self-assembly; semiconductor quantum dots; spectral line broadening; 0 K; InGaAlAs; InGaAlAs self-assembled quantum dots; coherence; coherence time; degenerate four wave mixing; dephasing; exciton-phonon interactions; finite temperatures; inferred homogeneous line widths; inhomogeneous broadening mechanism; photoluminescence; pure dephasing; quantum dot coherence; Excitons; Four-wave mixing; Photoluminescence; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Space technology; Temperature; Time measurement; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
Type :
conf
DOI :
10.1109/NANO.2003.1231730
Filename :
1231730
Link To Document :
بازگشت