DocumentCode
2072741
Title
Optical and structural properties of InP nanowires grown under vapor-liquid-solid mechanism by metal organic vapor phase epitaxy
Author
Bhunia, S. ; Kawamura, T. ; Watanabe, Y. ; Fujikawa, S. ; Tokushima, K.
Author_Institution
NTT Basic Res. Lab., Nippon Telegraph & Telephone Corp., Kanagawa, Japan
Volume
1
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
136
Abstract
Metal organic vapor phase epitaxial growth of surface mounted and vertically aligned InP nanowires under the vapor-liquid-solid mechanism is being reported in this paper. Two types of the nanowires were grown by using the suspended Au nanoparticles of 10 and 20 nm nominal diameters as the catalyst and their structural and optical properties were compared. Scanning electron microscopy showed the growth of isolated, of uniform cross section along the length and the large number of nanowires per unit area in range of 7-10×109 cm-2 for both the Au nanoparticles used. The distribution in the diameters of the nanowires grown using the 10 and 20 nm Au nanoparticles were in the ranges of 5-110 and 5-60 nm, respectively, with the average length of 700 nm, irrespective of the type of the catalysts used. Transmission electron microscopy showed the <111> orientation of the nanowires with the presence of alternate rotational twin structures along the length. Energy dispersive X-ray analysis was carried out for elemental analysis of a single nanowire. The nanowires showed clear room temperature photoluminescence spectra with the peaks blue shifted by 25 and 32 meV due to the quantum confinement of the carriers in the nanowires grown on 10 and 20 nm Au nanoparticles, respectively. The successful growth of these nanowires will help in realizing the wafer scale fabrication and integration of new electro-optic devices under the bottom-up approach.
Keywords
III-V semiconductors; MOCVD; X-ray chemical analysis; indium compounds; nanowires; photoluminescence; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; spectral line shift; surface morphology; transmission electron microscopy; vapour phase epitaxial growth; 293 to 298 K; 5 to 110 nm; 700 nm; <111> orientation; Au; Au nanoparticles; InP; InP nanowires; blue shift; catalyst; electro-optic devices; electrooptic devices; elemental analysis; energy dispersive X-ray analysis; isolated growth; metal organic vapor phase epitaxial growth; optical properties; photoluminescence spectra; quantum confinement; room temperature; rotational twin structures; scanning electron microscopy; structural properties; transmission electron microscopy; vapor-liquid-solid mechanism; wafer scale fabrication; Dispersion; Electron optics; Epitaxial growth; Gold; Indium phosphide; Mechanical factors; Nanoparticles; Nanowires; Scanning electron microscopy; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1231734
Filename
1231734
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